Silicon Genesis Announces End of Its ITC Patent Lawsuit Against Soitec

SAN JOSE, Calif.–(BUSINESS WIRE)–Silicon Genesis Corporation (SiGen), a leader in process technology and equipment for engineered substrates, and a pioneer of beam-induced thick-film and thin-film room temperature controlled cleave layer transfer, announced today that together with Soitec they have successfully brought an end to the dispute regarding the importation and sale in the United States of certain Silicon-on-Insulator (SOI) wafers by Soitec. Both companies have agreed to dismiss all pending litigations as a result.

Ted Fong, president and CEO of SiGen said: “This settlement is a positive outcome for SiGen and we believe will be beneficial for the SOI industry. We can now focus on the development of new product applications with our proprietary layer transfer process technology.”

About SiGen

SiGen is a leading provider of engineered substrate process technology and equipment for the semiconductor, display, and optoelectronics markets. SiGen’s technology is used for production of Silicon-on-Insulator (SOI) semiconductor wafers for high performance applications. SiGen develops innovative substrates through thin-film and thick-film engineering, enabling new applications and markets for its customers. SiGen’s customers and partners include top players from substrate and equipment suppliers throughout the world. Founded in 1997, SiGen is headquartered in Santa Clara, California. For more information, visit http://www.sigen.com

Contacts

Silicon Genesis Corporation
Ted Fong, 408-228-5858
tfong@sigen.com

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